Informace o publikaci
Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons
| Autoři | |
|---|---|
| Rok publikování | 2007 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Materials Transactions |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://www.jim.or.jp/journal/e/48/05/936.html |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | electron microscopic contrasts, semiconductors, dopant contrast, scanning electron microscopy, scanning low energy electron microscopy, photoelectron emission microscopy |
| Popis | Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism. |