Project information
CMOS Compatible Single Photon Sources based on SiGe Quantum Dots
(CUSPIDOR)
- Project Identification
- 8C18001
- Project Period
- 4/2018 - 6/2022
- Investor / Pogramme / Project type
-
Ministry of Education, Youth and Sports of the CR
- ERA-NET
- QUANTERA
- MU Faculty or unit
- Faculty of Science
- Cooperating Organization
-
Johannes Kepler University Linz
Universita degli Studi di Pavia
Cork Institute of Technology
Tyndall National Institute
The efficient generation of quantum states of light is a vital task in Quantum Photonics. Current approaches are bulky and expensive with low generation rates and there is only a handful of commercial products. CUSPIDOR will develop a novel integrated photonic platform relying on a fully CMOS-compatible technology, which will provide compact and highly efficient sources of deterministic single photons at telecommunications wavelengths. Using quantum electro-dynamics principles, silicon-germanium quantum dots (QDs) in silicon will be optimized for radiative efficiency up to room temperature. Ion implantation will be implemented during the growth, thus modifying the electron wave function and improving the radiative recombination rate. Optimal and deterministic coupling of the QDs with the cavities will be achieved by site controlled QD growth in combination with precisely aligned, lithographically defined photonic crystal resonators, allowing upscaling and a straight forward implementation of areas of identical single photon sources.
The project will create a strong team of quantum photonics researchers proficient with material design and growth, advanced CMOS processes and nanophotonics design, who will become the basis of a new community spanning these diverse fields. A firm basis of design skills and fabrication expertise will be established that will provide a base for further innovation and the exploitation of quantum light sources.
This consortium will exploit the state-of-art advances in CMOS processing to realise advanced photonic crystal components that will dramatically improve the functionality of the silicon-germanium devices. The final target is a demonstrator for a compact, integrated, and flexible source of quantum states of light ready for prototyping.
Publications
Total number of publications: 14
2023
-
GaAs quantum dots under quasiuniaxial stress: Experiment and theory
Physical Review B, year: 2023, volume: 107, edition: 23, DOI
2022
-
Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots
Nanomaterials, year: 2022, volume: 12, edition: 4, DOI
-
Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots
Physical Review B, year: 2022, volume: 105, edition: 19, DOI
-
Interplay between multipole expansion of exchange interaction and Coulomb correlation of exciton in colloidal II–VI quantum dots
Electronic Structure, year: 2022, volume: 4, edition: 1, DOI
-
Modeling electronic and optical properties of III–V quantum dots—selected recent developments
Light: Science & Applications, year: 2022, volume: 11, edition: 1, DOI
2021
-
Electric field induced tuning of electronic correlation in weakly confining quantum dots
Physical Review B, year: 2021, volume: 104, edition: 16, DOI
-
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
New Journal of Physics, year: 2021, volume: 23, edition: 10, DOI
-
Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
Light: Science & Applications, year: 2021, volume: 10, edition: 1, DOI
2019
-
Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots
Annalen der Physik (Berlin), year: 2019, volume: 531, edition: 6, DOI
-
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
Physical Review B, year: 2019, volume: 100, edition: 11, DOI