Project information
Quantum dots in III - V semiconductors
- Project Identification
- GA202/99/1613
- Project Period
- 1/1999 - 1/2001
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
- Faculty of Science
- Cooperating Organization
-
Institute of Physics of the ASCR, v. v. i.
- Responsible person prof. Ing. Eduard Hulicius, CSc.
Investigation of the growth and properties of quantum dots (QD) in III-V compound semiconductor materials, mainly in the InAs/GaAs system. Deposition of relatively large volume of the material containing QD by metalorganic vapour phase epitaxy (MOVPE) u sing the Stranski-Krastanow growth mechanism. Influencing the deposition by the type and crystallographic orientation of the substrate. Trial growth of the GaSb-based structures, and silicon doping of the InAs/GaAs system. Comparison of the MOVPE structu res with similar samples grown by molecular beam epitaxy (MBE). Structure and other physical properties of QD samples using X-ray scattering, optical methods, including photoluminescence, reflectivity and ellipsometry, Raman spectroscopy, magnetotranspo rt, and atomic-force and scanning tunneling microscopy. Comparison of luminescence and absorption mechanisms of the optical response. Correlations of the structural, optical and transport properties. Interaction of QDs with dopants in the surrounding mat
Publications
Total number of publications: 3
2002
-
Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
Physica E, year: 2002, volume: 13, edition: 2
2000
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Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice
Appl. Phys. Lett., year: 2000, volume: 76, edition: 20
1999
-
Optical characterisation of a thick MOVPE InSb film on GaAs
Workshop proceedings EW MOVPE VIII, year: 1999