Publication details

Activation of silicon surface in atmospheric oxygen plasma

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Authors

SKÁCELOVÁ Dana SŤAHEL Pavel ČERNÁK Mirko

Year of publication 2012
Type Article in Periodical
Magazine / Source CHEMICKÉ LISTY
MU Faculty or unit

Faculty of Science

Citation
Field Plasma physics
Keywords DCSBD; Si wafer; activation; oxygen plasma
Description In this contribution, the surface modification of crystalline silicon surface in oxygen atmosphere was investigated. Moreover the effect of crystallographic orientation and surface pre-cleaning of silicon surface were studied. c-Si wafers (100) and (111) oriented were cleaned in isopropyl alcohol or etched in HF solution and afterwards treated in Diffuse Coplanar Surface Barrier Discharge. Wettability, changes of surface properties and ageing effect of plasma treated surface were studied by means of contact angle measurement. It was proved, that modification of c-Si surface in oxygen plasma improve the wettability independent on crystallographic orientation and initial cleaning process.
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