Publication details

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

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Authors

SKÁCELOVÁ Dana SLÁDEK Petr SŤAHEL Pavel PAWERA Lukáš HANIČINEC Martin MEISCHNER Jürgen ČERNÁK Mirko

Year of publication 2015
Type Article in Periodical
Magazine / Source Open Chemistry
MU Faculty or unit

Faculty of Science

Citation
Doi http://dx.doi.org/10.1515/chem-2015-0047
Field Plasma physics
Keywords Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD
Description In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
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