Publication details
Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
| Authors | |
|---|---|
| Year of publication | 2016 |
| Type | Article in Periodical |
| Magazine / Source | Materials Science Forum |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.4028/www.scientific.net/MSF.858.147 |
| Field | Solid matter physics and magnetism |
| Keywords | High-resolution X-ray diffraction; high-resolution scanning electron microscopy; electron backscatter diffraction; stacking faults; patterned Si substrates; heteroepitaxy; 3C-SiC |
| Description | The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction. |
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