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Publication details
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals
Authors | |
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Year of publication | 2018 |
Type | Article in Periodical |
Magazine / Source | Journal of Applied Crystallography |
MU Faculty or unit | |
Citation | |
Web | https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576718001450 |
Doi | http://dx.doi.org/10.1107/S1600576718001450 |
Field | Solid matter physics and magnetism |
Keywords | scanning X-ray nanodiffraction; lattice bending; graded SiGe microcrystals; strain relaxation |
Description | The scanning X-ray nanodiffraction technique is used to reconstruct the three- dimensional (3D) distribution of lattice strain and Ge concentration in compositionally graded Si1-xGex microcrystals epitaxially grown on Si pillars. |
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