Publication details

Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

Investor logo
Authors

PLUMHOF JD. TROTTA R. KŘÁPEK Vlastimil ZALLO E. ATKINSON P. KUMAR S. RASTELLI A. SCHMIDT OG.

Year of publication 2013
Type Article in Periodical
Magazine / Source Physical Review B
MU Faculty or unit

Faculty of Science

Citation
Web Full Text
Doi http://dx.doi.org/10.1103/PhysRevB.87.075311
Keywords SINGLE-HOLE SPIN
Description This work presents an experimental method to tune the degree of heavy-hole (HH) and light-hole (LH) mixing of the ground state of quantum dots (QDs). A ferroelectric crystal is used to apply reversible anisotropic biaxial stress to thin nanomembranes, containing GaAs/AlGaAs QDs. The stress-induced modification of the QD anisotropy leads to a change of the relative intensity of the two emission lines produced by the recombination of neutral bright excitonic states. Such a change is ascribed to a variation of the degree of HH-LH mixing. At the same time the modified anisotropy produces a change of the excitonic fine structure splitting (FSS). Model calculations provide a qualitative insight into the relation between strain, HH-LH mixing, and the FSS in epitaxial GaAs/AlGaAs QDs.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info