Publication details

Ferromagnetism due to oxygen vacancies in low dimensional oxides

Authors

NGUYEN Que Huong NGUYEN Hoa Hong

Year of publication 2021
Type Article in Periodical
Magazine / Source Journal of Magnetism and Magnetic Materials
MU Faculty or unit

Faculty of Science

Citation
Web https://doi.org/10.1016/j.jmmm.2021.167944
Doi http://dx.doi.org/10.1016/j.jmmm.2021.167944
Keywords Thin film; Semiconductors; Impurity; Ferromagnetism; Low dimensionality
Description To explain the observed room temperature ferromagnetism found in pristine oxides of TiO2, HfO2 and In2O3 thin films, a model of oxygen vacancy was proposed. An electronic structure calculation had been carried out using the tight binding method in the confinement configuration to show that a vacancy site in these oxides could create spin splitting and high spin state. The exchange interaction between the electrons surrounding the oxygen vacancy with the local field of symmetry could lead to a ferromagnetic ground state of the system.

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