Strain relaxation and surface morphology of compositionally graded Si/SiGe buffers

• Authors: LI J.H.; SPRINGHOLZ G.; STANGL G.; SEYRINGER H.; HOLÝ Václav; SCHAFFLER F.; BAUER G.
• Year of publication: 1998
• Type: Article in Periodical
• Magazine / Source: J. Vac. Sci & Technol.
• MU Faculty or unit: Faculty of Science
• Field: Solid matter physics and magnetism

Related projects

• Laboratory of thin films and nanostructures