Publication details
Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
| Authors | |
|---|---|
| Year of publication | 2024 |
| Type | Article in Periodical |
| Magazine / Source | Applied Physics Letters |
| MU Faculty or unit | |
| Citation | |
| web | https://pubs.aip.org/aip/apl/article/124/6/061102/3262374/Epitaxial-growth-and-characterization-of-multi |
| Doi | http://dx.doi.org/10.1063/5.0187074 |
| Keywords | Phonons; Semiconductors; Elasticity theory; Emission spectroscopy; Epitaxy; Atomic force microscopy; Quantum dots; Surface strains; Nanotechnology; Lasers |
| Description | We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This deterministic growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve spectral control of emission and a local increase in the emitter density. Furthermore, we achieve a threefold increase in the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is valuable for using the SCQDs as a gain medium in microlaser applications. Our optimization of site-controlled growth of quantum dots enables the development of high-ß microlasers with increased confinement factor. |