Publication details
Effect of vacancies and impurities on properties of MoSi2/TiSi2 disilicide nanocomposites
| Authors | |
|---|---|
| Year of publication | 2024 |
| Type | Conference abstract |
| MU Faculty or unit | |
| Citation | |
| Description | Ab initio analysis concentrates on the C11b (tetragonal) MoSi2/C54 (orthorhombic) TiSi2 nanocomposites containing various types of interfaces formed by planes with similar arrangements (i.e. (110) planes in the C11b and (100) planes in the C54 disilicide). The effect of the impurities (Al, Si) and vacancies on the stability and structure arrangement was also investigated. |