Interdiffusion in amorphous Nb/Si multilayers

• Authors: BOCHNÍČEK Zdeněk; VÁVRA Ivo
• Year of publication: 2000
• Type: Article in Periodical
• Magazine / Source: Materials Letters
• MU Faculty or unit: Faculty of Science
• Field: Solid matter physics and magnetism
• Keywords: Nb/Si multilayer; Interdiffusion; Thermal stability
• Description: The interdiffusion in amorphous Nb/Si multilayers has been studied using x-ray optical reflection and TEM in temperature range from 150degC up to 350degC. In the whole temperature scale the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed which fits very well Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones.

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