Publication details
Origin of the metastability of phosphorus or boron doped a-Si:H films
| Authors | |
|---|---|
| Year of publication | 2000 |
| Type | Article in Proceedings |
| Conference | Electronic Devices and Systems Y2K - Proceedings |
| MU Faculty or unit | |
| Citation | SŤAHEL, Pavel, Petr SLÁDEK, Pere ROCA I CABARROCAS and Jiří ŠŤASTNÝ. Origin of the metastability of phosphorus or boron doped a-Si:H films. In Electronic Devices and Systems Y2K - Proceedings. první. Brno: ing. Zdeněk Novotný, CSc., 2000, p. 207-212. ISBN 80-214-1780-3. |
| Field | Solid matter physics and magnetism |
| Keywords | amorphous silicon; doping; metastability |
| Description | The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role. |
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