Publication details
Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon
| Authors | |
|---|---|
| Year of publication | 2004 |
| Type | Article in Proceedings |
| Conference | Proceedings of The Ninth Scientific and Business Conference SILICON 2004 |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | Infrared; Silicon; Oxygen; Precipitates; Nitrogen doping |
| Description | We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates of different shapes. An effective-medium model of average dielectric constant has been used to determine the shape, volume fraction and stoichiometry of the precipitates. Standard and nitrogen-doped samples have been measured; we have observed a favourable influence of nitrogen on oxygen precipitation. |
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