Publication details

Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

Authors

HUMLÍČEK Josef KŘÁPEK Vlastimil FIKAR Jan

Year of publication 2005
Type Article in Proceedings
Conference CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords quantum dots; photoluminescence
Description We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.
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