Publication details
Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
| Authors | |
|---|---|
| Year of publication | 2007 |
| Type | Article in Proceedings |
| Conference | CP893, Physics of Semiconductors, 28th International Conference |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | metal-insulator transition; doped silicon; ellipsometry |
| Description | We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response. |
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