Publication details

Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist

Authors

LE Quoc Toan KESTERS Els PRAGER Lutz LUX Marcel MARŠÍK Přemysl VEREECKE Guy

Year of publication 2009
Type Article in Proceedings
Conference Materials Research Society Symposium Proceedings
MU Faculty or unit

Faculty of Science

Citation
Web DOI: 10.1557/PROC-1156-D02-09
Field Solid matter physics and magnetism
Keywords photoresist; UV-treatment
Description This study focused on the effect of UV irradiation on modification of polymethyl methacrylate-based photoresist, and then on wet photoresist (PR) removal of patterned structure (single damascene structure). Three single-wavelength UV sources were considered for PR treatment, with lambda = 172, 222, and 283 nm. Modification of blanket PR was characterized using Fourier-transform infrared spectroscopy (FTIR; chemical change), spectroscopic ellipsometry (SE; thickness change), and dissolution in organic solvent (solubility change). While for patterned samples, scanning electron microscopy (SEM) was used for evaluation of cleaning efficiency. In comparison to 172 nm, the PR film irradiated by 222 nm and 283 nm photons resulted in formation of higher concentration in C=C bond. Immersion tests using pure N-methyl pyrrolidone (NMP) at 60 C for 2 min showed that some improvement in PR removal was only observed for PR films treated by 283 nm UV for short irradiation times. Irradiation by photons at the other two wavelengths did not result in an enhancement of removal efficiency. The PR film treated by 222 nm photons was chosen for further study with O3/H2O vapor at 90C. Experimental results showed a complete PR and BARC removal for UV-treated PR, which can be explained by C=C bond cleavage by the oxidizer.
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