Publication details

Improved low-k dielectric properties using He/H2 plasma for resist removal

Authors

URBANOWICZ Adam SHAMIRYAN Denis MARŠÍK Přemysl TRAVALY Youssef VERDONCK Patrick VANSTREELS Kris FERCHICHI Abdelkarim DE ROEST David SPREY Hessel MATSUSHITA Kiyohiro KANEKO Shinya TSUI N. LUO Shijian ESCORCIA Orlando BERRY Ivan WALDFRIED Carlo DE GENDT Stefan BAKLANOV Mikhail

Year of publication 2008
Type Appeared in Conference without Proceedings
MU Faculty or unit

Faculty of Science

Citation
Description Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material.
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