Publication details
Improved low-k dielectric properties using He/H2 plasma for resist removal
| Authors | |
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| Year of publication | 2008 |
| Type | Appeared in Conference without Proceedings |
| MU Faculty or unit | |
| Citation | |
| Description | Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material. |
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