Publication details
Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
| Authors | |
|---|---|
| Year of publication | 2012 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Applied Physics |
| MU Faculty or unit | |
| Citation | |
| web | http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no |
| Doi | http://dx.doi.org/10.1063/1.3677995 |
| Field | Solid matter physics and magnetism |
| Keywords | LAYERS; ENHANCEMENT; GAINP; DOTS |
| Description | The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry. |
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