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Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
Autoři | |
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Rok publikování | 2015 |
Druh | Článek v odborném periodiku |
Časopis / Zdroj | Journal of Synchrotron Radiation |
Fakulta / Pracoviště MU | |
Citace | |
www | http://journals.iucr.org/s/issues/2015/04/00/ie5133/ |
Doi | http://dx.doi.org/10.1107/S1600577515009650 |
Obor | Fyzika pevných látek a magnetismus |
Klíčová slova | XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging |
Popis | Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods. |