Informace o publikaci
Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging
| Autoři | |
|---|---|
| Rok publikování | 2015 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Journal of Synchrotron Radiation |
| Fakulta / Pracoviště MU | |
| Citace | LI, Z.J., A.N. DANILEWSKY, L. HELFEN, Petr MIKULÍK, D. HAENSCHKE, J. WITTGE, D. ALLEN, P. MCNALLY a T. BAUMBACH. Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. Journal of Synchrotron Radiation. USA: WILEY-BLACKWELL PUBLISHING, 2015, roč. 22, July, s. 1083-1090. ISSN 0909-0495. Dostupné z: https://dx.doi.org/10.1107/S1600577515009650. |
| www | http://journals.iucr.org/s/issues/2015/04/00/ie5133/ |
| Doi | http://dx.doi.org/10.1107/S1600577515009650 |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | XMDI; nanoindentation; silicon; strain; defect; x-rays; microdiffraction; imaging |
| Popis | Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods. |