Informace o publikaci
R&D of x-ray and spectroscopic methods for characterization of TIGBT device
| Autoři | |
|---|---|
| Rok publikování | 2015 |
| Druh | Výzkumná zpráva |
| Fakulta / Pracoviště MU | |
| Popis | *Goal: Utilization of characterization methods at CEITEC MU for R&D of Trench-Insulated-Gate-Bipolar-Transistor (TIGBT) Device Description: ON SEMICONDUCTOR with CEITEC MU have have started R&D of TIGBT technology. ON SEMICONDUCTOR asked CEITEC MU for advanced material characterization of TIGBT wafers and devices and for feasibility of new methods for this characterization. Milestones: · Perform characterization of TIGBT wafers (including SOI substrates). · Evaluation of feasibility of x-ray topography and scattering for defects analysis. · Evaluation of feasibility of Raman spectroscopy for analysis of defects and of internal strain. · Evaluation of feasibility of other methods for TIGBT characterization. · Modeling of temperature distribution in Si wafer during laser annealing. Samples of TIGBT devices and wafers (including SOI substrates) will be supplied by ON SEMICONDUCTOR.* |