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Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

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Název česky Ohyb mřížky ve 3D Ge mikrokrystalech studovaných pomocí rtg nanodifrakce a modelováním
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MEDUŇA Mojmír FALUB Claudiu Valentin ISA Fabio MARZEGALLI Anna CHRASTINA Daniel ISELLA Giovanni MIGLIO Leo DOMMANN Alex VON KAENEL Hans

Rok publikování 2016
Druh Článek v odborném periodiku
Časopis / Zdroj Journal of Applied Crystallography
Fakulta / Pracoviště MU

Středoevropský technologický institut

Citace
www http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
Doi http://dx.doi.org/10.1107/S1600576716006397
Obor Fyzika pevných látek a magnetismus
Klíčová slova scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation
Popis Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.
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