Informace o publikaci
Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure
| Autoři | |
|---|---|
| Rok publikování | 2017 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Thin Solid Films |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub |
| Doi | http://dx.doi.org/10.1016/j.tsf.2016.09.022 |
| Klíčová slova | Plasma jet; Liquid assisted plasma enhanced chemical vapour deposition; Silicon oxide; Hexamethyldisiloxane; Octamethyltetrasiloxane; Tetrakis(trimethylsilyloxy)silane |
| Přiložené soubory | |
| Popis | The present study introduces a process for the synthesis of functional films onto substrates directly from the liquid phase. The reported method is based on the initialization of the synthesis by means of an atmospheric pressure plasma jet operating with argon above a thin liquid film of the starting material. The process is demonstrated by the formation of a thin, solid SiOx film from siloxane-based liquid precursors. Changes in the chemical properties of the precursor were studied in-situ during the polymerization process on the diamond crystal by using Fourier transform infrared spectroscopy The elemental composition of the SiOxCy films was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, XPS was applied to study the effect of post-annealing processes on the composition of the films. The obtained deposits exhibit a low concentration of carbon groups. The amount of hydroxyl groups and interstitial water can be reduced significantly by post-process annealing of the films. (C) 2016 The Author(s). Published by Elsevier B.V. |
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