Informace o publikaci

Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction

Autoři

ZHUANG Y. HOLÝ Václav STANGL J. DARHUBER A.A. MIKULÍK Petr ZERLAUTH S. SCHÄFFLER F. BAUER G. DAROWSKI N. LÜBBERT D. PIETSCH U.

Rok publikování 1999
Druh Článek v odborném periodiku
Časopis / Zdroj J. Phys. D: Appl. Phys.
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://www.sci.muni.cz/~mikulik/Publications.html#ZhuangMikulikXTOP98
Obor Fyzika pevných látek a magnetismus
Klíčová slova quantum wires; SiGe; x-ray diffraction; GID
Popis Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.
Související projekty:

Používáte starou verzi internetového prohlížeče. Doporučujeme aktualizovat Váš prohlížeč na nejnovější verzi.

Další info