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ZnO thin films made by sputtering: room temperature ferromagnetism due to Zn defects/vacancies?

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NGUYEN Hoa Hong PHAM Sy Nguyen MURAKAMI Tatsuya MEDUŇA Mojmír CAHA Ondřej MIHÁLIKOVÁ Ivana FRIÁK Martin

Rok publikování 2025
Druh Článek v odborném periodiku
Časopis / Zdroj RSC Advances
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://doi.org/10.1039/D5RA00146C
Doi http://dx.doi.org/10.1039/D5RA00146C
Popis Unlike TiO2 and SnO2, room temperature ferromagnetism in pristine ZnO films does not appear to originate from oxygen vacancies. In this study, we investigated thin films of ZnO deposited on R-cut Al2O3 by sputtering. The ZnO films were ferromagnetic, with a very high TC of about 800 K and were quite magnetically homogenous. Our experiments were complemented by quantum-mechanical calculations of both bulk wurtzite-structure ZnO and its (0001) surfaces, with and without Zn vacancies. While the bulk ground state and the bulk-terminated, vacancy-free (0001) surfaces were non-magnetic, a higher concentration of Zn vacancies deep beneath the surface was shown to contribute magnetic moments to the ferromagnetic state of ZnO.
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