Informace o publikaci
Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths
| Název česky | Vliv tlaku na účinnost UV ošetření CVD low-k materiálů za použití různých vlnových délek |
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| Autoři | |
| Rok publikování | 2008 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Microelectronic Engineering |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | low-k; UV curing |
| Popis | Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE). |
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