Publication details
Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths
| Authors | |
|---|---|
| Year of publication | 2008 |
| Type | Article in Periodical |
| Magazine / Source | Microelectronic Engineering |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | low-k; UV curing |
| Description | Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE). |
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