Publication details

Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths

Authors

PRAGER Lutz MARŠÍK Přemysl GERLACH J. W. BAKLANOV Mikhail NAUMOV S. PISTOL L. SCHNEIDER Dieter WENNRICH L. VERDONCK Patrick BUCHMEISER M.R.

Year of publication 2008
Type Article in Periodical
Magazine / Source Microelectronic Engineering
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords low-k; UV curing
Description Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE).
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