Informace o publikaci
Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C
| Autoři | |
|---|---|
| Rok publikování | 2010 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | physica status solidi (c) |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://www.pss-c.com |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | SiGe; thin films; deposition conditions; structure; lattice properties |
| Popis | In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism. |
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