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Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation

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KOMARNITSKYY Volodymyr HAZDRA Pavel BURŠÍKOVÁ Vilma

Rok publikování 2011
Druh Článek v odborném periodiku
Časopis / Zdroj physica status solidi (c)
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
Doi http://dx.doi.org/10.1002/pssc.201000301
Obor Fyzika plazmatu a výboje v plynech
Klíčová slova Deuterium; Hydrogen; Radiation defects; Silicon
Popis Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high-energy alphas was investigated in the low-doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm-2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 C and diodes were isochronally annealed at temperatures ranging from 100 to 400 C. Reactions of hydrogen and deuterium with radiation defects were monitored by deep-level transient spectroscopy. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha-particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy-related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC-0.309 eV and EC-0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects, deuteration has weaker effect and gives rise to new defect levels during annealing.
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