prof. RNDr. Josef Humlíček, CSc.
Professor, Department of Condensed Matter Physics
office: pav. 09/02014
Kotlářská 267/2
611 37 Brno
phone: | +420 549 49 4505 |
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e‑mail: |
social and academic networks: |
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Total number of publications: 134
2018
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Structural and Optical Properties of Luminescent Copper (I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition
Coatings, year: 2018, volume: 8, edition: 10, DOI
2017
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Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy
AIP Advances, year: 2017, volume: 7, edition: 7, DOI
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Ellipsometry of surface layers on a 1-kg sphere from natural silicon
Applied Surface Science, year: 2017, volume: 421, edition: January, DOI
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Interband absorption edge in the topological insulators Bi-2(Te1-xSex)(3)
Physical Review B, year: 2017, volume: 96, edition: 23, DOI
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Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect
Physical Review B, year: 2017, volume: 96, edition: 4, DOI
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Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures
Applied Surface Science, year: 2017, volume: 421, edition: November, DOI
2016
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Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
ACTA PHYSICA POLONICA A, year: 2016, volume: 129, edition: 1A, DOI
2015
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Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples
Journal of Applied Physics, year: 2015, volume: 118, edition: 19, DOI
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Polarization anisotropy of the emission from type-II quantum dots
Physical Review B, year: 2015, volume: 92, edition: 24, DOI
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R&D of x-ray and spectroscopic methods for characterization of TIGBT device
Year: 2015