Project information
Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
- Project Identification
- GA202/00/0354
- Project Period
- 1/2000 - 1/2002
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
- Faculty of Science
The process of self organization during the epitaxial growth of a semiconductor heterostructure is a good candidate for the technology of very small structures (quantum wires and dots) with very interesting applications. In the proposed project the struc ture of self organized interfaces will be studied by x-ray scattering (small angle x-ray scattering, high-angle scattering, grazing-incidence scattering) and by means of atomic-force microscopy. The experimental results will be compared to the theoretica l simulations of epitaxial growth based on the Monte-Carlo simulations of the growth kinetics and on the calculations of the deformation field below the growing surface. Experiments will be performed on SiGe/Si SiC/Ge and PbSe/PbEuTe superlattices grown by molecular beam epitaxy. X-ray measurements will be carried out on laboratory x-ray sources as well as on the ESRF synchrotron in Grenoble. The structural changes of the self organized interfaces at high temperatures will be investigated by x-ray hight
Publications
Total number of publications: 26
2004
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High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers
Applied Physics Letters, year: 2004, volume: 85, edition: 7
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High-Resolution X-Ray Scattering From Thin Films to Lateral Nanostructures
Year: 2004, number of pages: 408 s.
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Structural properties of self-organized semiconductor nanostructures
Review of Moder Physics, year: 2004, volume: 76, edition: 4
2002
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Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices
Semicond. Sci. Technol., year: 2002, volume: 17, edition: 1
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Dot size dependence of vertical and lateral ordering in selforganized PbSe/PbEuTe quantum-dot superlattices
Appl. Phys. Lett., year: 2002, volume: 82, edition: 15
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Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Physical Review B, year: 2002, volume: B66, edition: 5
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Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction
Appl. Phys. Lett., year: 2002, volume: 80, edition: 3
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Investigation of morphology and chemical composition of self-organized semiconductor quantum dots and wires by X-ray scattering
Acta Physica Polonica, year: 2002, volume: A102, edition: 3
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Lateral composition modulation in (InAs)(n)/(AlAs)(m) short-period superlattices investigated by high-resolution x-ray scattering
Physical Review B, year: 2002, volume: 66, edition: 8
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Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers
Physica E, year: 2002, volume: 13, edition: 4