Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon

• Authors: FALUB Claudiu Valentin; KREILIGER Thomas; TABOADA A.; ISA Fabio; CHRASTINA Daniel; ISELLA G.; MULLER E.; MEDUŇA Mojmír; BERGAMASCHINI R.; MARZEGALLI Anna; BONERA E.; PEZZOLI F.; MIGLIO Leo; NIEDERMANN P.; NEELS A.; PEZOUS A.; KAUFMANN R.; DOMMANN A.; VON KAENEL Hans
• Year of publication: 2012
• Type: Article in Proceedings
• Conference: 2012 International Semiconductor Conference (CAS) Vols 1 and 2
• MU Faculty or unit: Central European Institute of Technology
• web: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698
• Doi: http://dx.doi.org/10.1109/SMICND.2012.6400698
• Field: Solid matter physics and magnetism
• Keywords: monolithic integration; high quality Ge; elimination of cracking; threading-dislocation densities; epitaxial necking; patterned Si substrates; electrical properties
• Description: In the quest for a Ge x-ray detector monolithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks.

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