Publication details

Zařízení pro měření tloušťky polovodičových vrstevnatých struktur SOI

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Title in English Apparatus to measure thickness of SOI semiconductor layered structures
Authors

MÜNZ Filip HUMLÍČEK Josef

Year of publication 2014
MU Faculty or unit

Faculty of Science

Web http://spisy.upv.cz/UtilityModels/FullDocuments/FDUM0027/uv027013.pdf
Description Technical solution targets measurements of thickness of SOI layered semiconductor structures through optical means in VIS/NIR range with precision of 30 nm in 1-10 micron range; it comprises a light source, optical fibers, scanner, spectrometer, control electronics and computer
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