Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

• Authors: ISA Fabio; PEZZOLI Fabio; ISELLA G.; MEDUŇA Mojmír; FALUB C.V.; MÜLLER E.; KREILIGER Thomas; TABOADA A. G.; VON KAENEL Hans; MIGLIO Leo
• Year of publication: 2015
• Type: Article in Periodical
• Magazine / Source: Semiconductor Science and Technology
• MU Faculty or unit: Central European Institute of Technology
• Doi: http://dx.doi.org/10.1088/0268-1242/30/10/105001
• Field: Solid matter physics and magnetism
• Keywords: multiple quantum wells; silicon germanium; photoluminescence; epitaxy; crystal quality
• Description: In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape.

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