Publication details
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
| Authors | |
|---|---|
| Year of publication | 2022 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Physics D: Applied Physics |
| MU Faculty or unit | |
| Citation | |
| web | https://iopscience.iop.org/article/10.1088/1361-6463/ac5c1a |
| Doi | http://dx.doi.org/10.1088/1361-6463/ac5c1a |
| Keywords | V-pits; InGaN; GaN; dislocations; x-ray diffraction; diffuse scattering; XRD; RSM |
| Description | Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density. |