Informace o publikaci
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
| Autoři | |
|---|---|
| Rok publikování | 2022 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Journal of Physics D: Applied Physics |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | https://iopscience.iop.org/article/10.1088/1361-6463/ac5c1a |
| Doi | http://dx.doi.org/10.1088/1361-6463/ac5c1a |
| Klíčová slova | V-pits; InGaN; GaN; dislocations; x-ray diffraction; diffuse scattering; XRD; RSM |
| Popis | Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density. |