Publication details
Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection
| Authors | |
|---|---|
| Year of publication | 1999 |
| Type | Article in Periodical |
| Magazine / Source | Bulletin Krystalografické společnosti Materials Structure |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | thermal stability; mutlilayers; x-ray reflection |
| Description | The thermal stability was studied in temperature range from 150C up to 350C. It has been found, that interdifusion causes the interface shift without lost of interface sharpness. The diffusion model has been suggested that is based on enhanced diffusion of Si into Nb component of the multilayer. |
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