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Informace o publikaci
Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection
Autoři | |
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Rok publikování | 1999 |
Druh | Článek v odborném periodiku |
Časopis / Zdroj | Bulletin Krystalografické společnosti Materials Structure |
Fakulta / Pracoviště MU | |
Citace | |
Obor | Fyzika pevných látek a magnetismus |
Klíčová slova | thermal stability; mutlilayers; x-ray reflection |
Popis | The thermal stability was studied in temperature range from 150C up to 350C. It has been found, that interdifusion causes the interface shift without lost of interface sharpness. The diffusion model has been suggested that is based on enhanced diffusion of Si into Nb component of the multilayer. |
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