Electronic Properties of Very Thin Native SiO2/a-Si:H Interfaces and Their Comparison With Those Prepared by Both Dielectric Barrier Discharge Oxidation at Atmospheric Pressure and by Chemical Oxidation

• Authors: KRÁĽ Martin; BUČEK Andrej; GLESKOVÁ H.; ČERNÁK Mirko; KOBAYASHI H.; RUSNÁK Jaroslav; ZÁHORAN Miroslav; BRUNER Róbert; PINČÍK Emil
• Year of publication: 2005
• Type: Article in Periodical
• Magazine / Source: Acta Physica Slovaca
• MU Faculty or unit: Faculty of Science
• Field: Plasma physics
• Keywords: Thin; SiO2/a-Si:H; Interfaces
• Description: Electronic Properties of Very Thin Native SiO2/a-Si:H Interfaces and Their Comparison With Those Prepared by Both Dielectricboth dielectric barrier discharge oxidation at atmospheric pressure and by chemical exidation