![Důležité termíny](https://cdn.muni.cz/media/3633704/image_2.jpg?mode=crop¢er=0.5,0.5&rnd=133572412150000000&heightratio=0.5&width=278)
Informace o publikaci
Electronic Properties of Very Thin Native SiO2/a-Si:H Interfaces and Their Comparison With Those Prepared by Both Dielectric Barrier Discharge Oxidation at Atmospheric Pressure and by Chemical Oxidation
Autoři | |
---|---|
Rok publikování | 2005 |
Druh | Článek v odborném periodiku |
Časopis / Zdroj | Acta Physica Slovaca |
Fakulta / Pracoviště MU | |
Citace | |
Obor | Fyzika plazmatu a výboje v plynech |
Klíčová slova | Thin; SiO2/a-Si:H; Interfaces |
Popis | Electronic Properties of Very Thin Native SiO2/a-Si:H Interfaces and Their Comparison With Those Prepared by Both Dielectric both dielectric barrier discharge oxidation at atmospheric pressure and by chemical exidation |