Electronic Properties of Very Thin Native SiO2/a-Si:H Interfaces and Their Comparison With Those Prepared by Both Dielectric Barrier Discharge Oxidation at Atmospheric Pressure and by Chemical Oxidation

• Autoři: KRÁĽ Martin; BUČEK Andrej; GLESKOVÁ H.; ČERNÁK Mirko; KOBAYASHI H.; RUSNÁK Jaroslav; ZÁHORAN Miroslav; BRUNER Róbert; PINČÍK Emil
• Rok publikování: 2005
• Druh: Článek v odborném periodiku
• Časopis / Zdroj: Acta Physica Slovaca
• Fakulta / Pracoviště MU: Přírodovědecká fakulta
• Obor: Fyzika plazmatu a výboje v plynech
• Klíčová slova: Thin; SiO2/a-Si:H; Interfaces
• Popis: Electronic Properties of Very Thin Native SiO2/a-Si:H Interfaces and Their Comparison With Those Prepared by Both Dielectric both dielectric barrier discharge oxidation at atmospheric pressure and by chemical exidation