Publication details

HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED

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Authors

MEDUŇA Mojmír NOVÁK Jiří BAUER Günther FALUB Claudiu GRÜTZMACHER Detlev

Year of publication 2005
Type Conference abstract
MU Faculty or unit

Faculty of Science

Citation
Description We have investigated annealing behavior of strain compensated Si/SiGe MQW structures with different multilayer periods, grown by molecular beam epitaxy on Si0.75Ge0.25 pseudo-substrates.
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