Publication details
HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED
Authors | |
---|---|
Year of publication | 2005 |
Type | Conference abstract |
MU Faculty or unit | |
Citation | |
Description | We have investigated annealing behavior of strain compensated Si/SiGe MQW structures with different multilayer periods, grown by molecular beam epitaxy on Si0.75Ge0.25 pseudo-substrates. |
Related projects: |