Project information
Investigation of morphology of semiconductor multilayers using x-ray scattering

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Project Identification
GP202/05/P286
Project Period
1/2005 - 12/2007
Investor / Pogramme / Project type
Czech Science Foundation
MU Faculty or unit
Faculty of Science
Keywords
x-ray scattering, multilayers, SiGe, quantum dots

Heteroepitaxial systems based on semiconductor multilayers are intensively studied due to their extraordinary electrical and optical properties, which depend on the structural quality. In this project, we will investigate morphology of two types ofcompli cated multilayers from materials of type IV and III/V grown by MBE method. Firstly, thick multilayers with large number of non-periodic thin SiGe/Si layers grown in order to design cascade laser structures based on silicon technology. Secondly,multilayer s with self-assembled structures of quantum dots and wires. We will be interested in the morphological properties as a state of individual layers (thickness, refractive index), interfaces (correlation function) and quantum objects (spatialarrangement). I nvestigated samples will be studied by x-ray reflectivity and diffraction methods using laboratory and synchrotron sources. Evaluation of measured data will be based on appropriate growth models.

Publications

Total number of publications: 10


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