Publication details
Some electrical properties of SiOxHyCz thin films prepared by PECVD
| Authors | |
|---|---|
| Year of publication | 2007 |
| Type | Article in Proceedings |
| Conference | New Trends in Physics |
| MU Faculty or unit | |
| Citation | |
| Field | Plasma physics |
| Keywords | Frenkel Poole effect conduction mechanisms PECVD |
| Description | The current-voltage characteristics of the Al-SiOxHyCz -Al thin film sandwich systems at different temperatures and deposition conductions were studied. SiOxHyCz films were deposited by PECVD on glass substrates in stainless steel parallel plate reactor from HMDSO/oxygen mixtures. The Al electrodes were thermally evaporated and their thickness was about 100 nm. The current transport mechanism in these thin films is shown to be Poole-Frenkel emission. At lower temperatures and thinner samples the space charge limited conduction was observed |
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