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Low-temperature reduction of Graphene Oxide by atmospheric pressure hydrogen plasma
Autoři | |
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Rok publikování | 2016 |
Druh | Článek ve sborníku |
Fakulta / Pracoviště MU | |
Citace | |
www | https://www.escampig2016.org |
Obor | Fyzika plazmatu a výboje v plynech |
Klíčová slova | graphene oxide, hydrogen plasma, atmospheric pressure, DCSBD |
Popis | The non-equilibrium hydrogen plasma generated at atmospheric pressure using Diffuse Coplanar Surface Barier Discharge (DCSBD) was used as an alternative low-temperature method for reduction of Graphene Oxide (GO). GO layers were prepared by modified Hummers method and deposited on Si/SiO 2 substrate by modified Langmuir-Schaefer method. Extremely short reduction times (<5 s) in hydrogen DCSBD plasma led to the similar level of GO reduction as obtained after the commonly used thermal vacuum annealing method for 30 minutes. |