Informace o publikaci

X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

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MEDUŇA Mojmír HOLÝ Václav ROCH T.

Rok publikování 2001
Druh Článek v odborném periodiku
Časopis / Zdroj Journal of Applied Physics
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
Obor Fyzika pevných látek a magnetismus
Klíčová slova SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES
Popis We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.
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