Publication details
IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
| Authors | |
|---|---|
| Year of publication | 2006 |
| Type | Article in Periodical |
| Magazine / Source | Materials Structure in Chemistry, Biology, Physics and Technology |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | x-ray diffraction; interdiffusion; SiGe |
| Description | We have studied series of strain symmetrized multiple quantum well structures grown on Si0.25Ge0.25 and Si0.5Ge0.5 pseudosubstrates. The Ge content in these structures was 30% and 80% with multilayer periods in the range from 6 to 13 nm. X-ray reflectivity and diffraction reciprocal space maps for all structures have been recorded at room temperature and during annealing. |
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