Publication details
Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus
| Authors | |
|---|---|
| Year of publication | 2013 |
| Type | Article in Periodical |
| Magazine / Source | Russian Journal of Electrochemistry |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.1134/S1023193513070033 |
| Field | Plasma physics |
| Keywords | mechanical properties; hardness; elastic modulus; nanoindentation; thin films; CeO2; Sm2O3; doping |
| Description | The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EBPVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature Tdep and Ar+ ion bombardment, on the (micro)hardness, Hpl and elastic modulus,Y with respect to the film structure and microstructure. These mechanical characteristics were investigated by the instrumented indentation technique as the functions of relative indentation depth hrel = hmax/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed. |