Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
-
Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 212
1994
-
Interpretation of infrared transmittance spectra of SiO 2 thin films
Applied Spectroscopy, year: 1994, volume: 48(1994), edition: 1
-
Nonspecular x-ray reflection from rough multilayers
Physical Review B, year: 1994, volume: 49, edition: 15
-
Quantitative analysis of strain relaxation and mosaicity in short period Si m Ge n superlattices using reciprocal space mapping by x-ray diffraction
Solid-State Electronics, year: 1994, volume: 37, edition: 4-6
-
Structural properties of perfect ZnTe epilayers on (001) GaAs substrates
Journal of Crystal Growth, year: 1994, volume: 138, edition: -
-
The influence of specular interface reflection on grazing incidence x-ray diffraction and diffuse scattering from superlattices
Physica B, year: 1994, volume: 198, edition: -
-
The influence of thermal processing on structural and electrical properties of Wx Si 1-x/Si multilayers
Nuclear Instruments & Methods in Physics Research A, year: 1994, volume: 350, edition: -
-
Transverse and longitudinal vibration modes in alpha-quartz
Philosophical Magazine B, year: 1994, volume: 70(1994), edition: 3
-
Undesirable Occurrence of the Interference Fringes in IR Transmittance Spectra
Scripta Fac.Brun., year: 1994, volume: 29(1994), edition: 1
-
X-ray characterization of semiconductor surfaces and interfaces
J. Phys. III France 4, year: 1994, volume: 1994, edition: -
-
X-ray triple-cristal diffractometry of defects in epitaxic layers
J. Appl. Cryst., year: 1994, volume: 27, edition: -