prof. RNDr. Václav Holý, CSc.
Professor, Department of Condensed Matter Physics
Office: pav. 09/02028
Kotlářská 267/2
611 37 Brno
Phone: | +420 549 49 4360 |
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E‑mail: |
social and academic networks: |
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Total number of publications: 210
1994
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X-ray characterization of semiconductor surfaces and interfaces
J. Phys. III France 4, year: 1994, volume: 1994, edition: -
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X-ray triple-cristal diffractometry of defects in epitaxic layers
J. Appl. Cryst., year: 1994, volume: 27, edition: -
1993
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Denuded zone depth studied by x-ray diffraction
3rd scientific and busines conference SILICON 92, year: 1993, volume: 1992, edition: 1
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The diffuse x-ray scattering in real periodical superlatices
Superlattices and Microstructures, year: 1993, volume: 12, edition: 1
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Triple crystal x-ray diffractometry of periodic arrays of semiconductor quantum wires
Appl. Phys. Lett., year: 1993, volume: 63, edition: 23
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X-ray diffraction and reflectance, raman scattering and photoluminiscence characterization of thermally annealed epitaxial Si 1-x Ge x layers
Thin Solid Films, year: 1993, volume: 1993, edition: 2
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X-ray diffractometry of small defects in layered systems
J. Phys. D: Appl. Phys., year: 1993, volume: 26, edition: -
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X-ray double and triple crystal diffractometry of mosaic structure in heteroepitaxial layers
J. Appl. Phys., year: 1993, volume: 74, edition: 3
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X-ray double and triple crystal diffractometry of silicon crystals with small defects
Phys. Stat. Sol. (b), year: 1993, volume: 1992, edition: -
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X-ray reflection from rough layered systems
Phys. Rev. B, year: 1993, volume: 47, edition: 23